2008-06-02 rev. 2.5 page 1 sdp04s60, sdd04s60 sdt04s60 thinq! sic schottky diode silicon carbide schottky diode ? worlds first 600v schottky diode ? revolutionary semiconductor material - silicon carbide ? switching behavior benchmark ? no reverse recovery ? no temperature influence on the switching behavior ? ideal diode for power factor correction up to 800w 1) ? no forward recovery product summary v rrm 600 v q c 13 nc i f 4 a pg-to220-2-2. p-to252 p-to220 pin 1 pin 2 n.c. c type package ordering code sdp04s60 p-to220-3 q67040-s4369 sdd04s60 p-to252-3 q67040-s4368 sdt04s60 p g -to220-2-2. q67040-s4445 pin 3 a marking d04s60 d04s60 d04s60 n.c. a c c a maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous forward current, t c =100c i f 4 a rms forward current , f =50 hz i frms 5.6 surge non repetitive forward current, sine halfwave t c =25c, t p =10ms i fsm 12.5 repetitive peak forward current t j =150c, t c =100c, d =0.1 i frm 18 non repetitive peak forward current t p =10s, t c =25c i fmax 40 i 2 t value , t c =25c, t p =10ms 3 i 2 d t 0.78 a2s repetitive peak reverse voltage v rrm 600 v surge peak reverse voltage v rsm 600 power dissipation , t c =25c p tot 36.5 w operating and storage temperature t j , t stg -55... +175 c
2008-06-02 rev. 2.5 page 2 sdp04s60, sdd04s60 sdt04s60 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 4.1 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: p g -to252-3-1: @ min. footprint p g -to252-3-1: @ 6 cm 2 cooling area 2) r thja - - - - 75 50 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics diode forward voltage i f =4a, t j =25c i f =4a, t j =150c v f - - 1.7 2 1.9 2.4 v reverse current v r =600v, t j =25c v r =600v, t j =150c i r - - 15 40 200 1000 a 1 ccm, v in = 85vac, t j = 150c, t c =100c, = 93%, i in = 30% 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2008-06-02 rev. 2.5 page 3 sdp04s60, sdd04s60 sdt04s60 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics total capacitive charge v r =400v, i f =4a, d i f /d t =200a/s, t j =150c q c - 13 - nc switching time r =400v, i f =4a, d i f /d t =200a/s, t j =150c t rr - n.a. - ns total capacitance v r =0v, t c =25c, f =1mhz v r =300v, t c =25c, f =1mhz v r =600v, t c =25c, f =1mhz c - - - 150 10 7 - - - pf
2008-06-02 rev. 2.5 page 4 sdp04s60, sdd04s60 sdt04s60 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 c 180 t c 0 5 10 15 20 25 30 w 40 p tot 2 diode forward current i f = f ( t c ) parameter: t j 175 c 0 20 40 60 80 100 120 140 c 180 t c 0 0.5 1 1.5 2 2.5 3 3.5 a 4.5 i f 4 typ. forward power dissipation vs. average forward current p f(av) = f ( i f ) t c =100c, d = t p / t 0 1 2 3 4 5 a 7 i f(av) 0 2 4 6 8 10 12 14 w 18 p f(av) d=0.1 d=0.2 d=0.5 d=1 3 typ. forward characteristic i f = f ( v f ) parameter: t j , t p = 350 s 0 0.5 1 1.5 2 2.5 v 3.5 v f 0 1 2 3 4 5 6 a 8 i f -40c 25c 100c 125c 150c
2008-06-02 rev. 2.5 page 5 sdp04s60, sdd04s60 sdt04s60 5 typ. reverse current vs. reverse voltage i r = f ( v r ) 100 200 300 400 v 600 v r -3 10 -2 10 -1 10 0 10 1 10 2 10 a i r 25c 100c 125c 150c 6 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w sdp04s60 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 7 typ. capacitance vs. reverse voltage c = f ( v r ) parameter: t c = 25 c, f = 1 mhz 10 0 10 1 10 2 10 3 v v r 0 25 50 75 pf 125 c 8 typ. c stored energy e c = f ( v r ) 0 100 200 300 400 v 600 v r 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 j 2 e c
2008-06-02 rev. 2.5 page 6 sdp04s60, sdd04s60 sdt04s60 9 typ. capacitive charge vs. current slop e q c = f ( d i f /d t ) parameter: t j = 150 c 100 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 2 4 6 8 10 nc 14 q c i f *0.5 i f i f *2
2008-06-02 rev. 2.5 page 7 sdp04s60, sdd04s60 sdt04s60 p-to220-3-1, p-to220-3-21
2008-06-02 rev. 2.5 page 7 sdp04s60, sdd04s60 sdt04s60 p-to252-3-1, p-to252-3-11, p-to252-3-21 (d-pak)
2008-06-02 rev. 2.5 page 8 sdp04s60, sdd04s60 sdt04s60 pg----
2008-06-02 rev. 2.5 page 9 sdp04s60, sdd04s60 sdt04s60
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